Aluminum nitride CAS 24304-00-5
Category:
Product Description
Molecular Weight: 40.99
EINECS: 246-140-8
Package: 100 g / 1 kg / 25 kg
Worldwide Delivery
Made in China
Product Details
Introduction
Aluminum nitride is a typical third-generation semiconductor material. It has an extremely wide bandgap and very large exciton binding energy. It also has a variety of outstanding physical properties, such as high breakdown field strength, thermal conductivity, resistivity, etc.
Application
Application electronic packaging substrate materials:
Aluminum nitride has excellent comprehensive properties, especially its outstanding thermal conductivity. It is very suitable for semiconductor substrates and structural packaging materials, and has great application potential in the electronics industry.
Application for luminescent materials:
As an important blue light and ultraviolet light-emitting material, AlN is used in ultraviolet/deep ultraviolet light-emitting diodes, ultraviolet laser diodes, and ultraviolet detectors.
Application ceramics and refractory materials
Aluminum nitride ceramics have significant advantages in the field of refractory materials. Due to its high thermal conductivity, high strength and high hardness, aluminum nitride ceramics can be used to manufacture high-performance refractory materials such as refractory bricks, refractory linings, etc.
Specification
Items | H-2 | H-3 | |
Specific surface area | >3.0 | >2.0 | |
Average particle size | <1.5 | <1.7 | |
Impurity content
| 0(wt%) | ≤0.95 | ≤1.35 |
C(ppm) | ≤350 | ≤400 | |
Ca(ppm) | ≤100 | ≤300 | |
Si(ppm) | ≤50 | ≤70 | |
Fe(ppm) | ≤20 | ≤30 | |
Keyword:
CAS 24304-00-5
Aluminum nitride
Send Inquiry
Leave a message immediately and receive free product consultation. We will arrange experts to contact you as soon as possible.