GALLIUM TELLURIDE CAS 12024-14-5
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Product Description
Molecular Formula:GaH2Te
Molecular Weight:199.34
Package: 1kg
Worldwide Delivery
Made in China
Product Details
Introduction and Application
GaTe is an important III-VI semiconductor layered compound material with a direct band gap of about 1.7 eV. It has great application research value in the fields of optoelectronic devices, radiation detectors and solar cells.
Specification
Appearance | Black |
Purity % | 99.99 /99.999/99.9999 |
Melting point °C | 824±2 |
Density g/cm3 | 5.44 |
Detection | ICP-MS (the sum of all impurity elements is less than 100ppm), XRD (main peak is symmetrical) |
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